Optical Reflection Studies of Damage in Ion Implanted Silicon
نویسندگان
چکیده
منابع مشابه
Optical absorption studies of ion implanted and amorphous silicon
A detailed study of the implantation induced damage in Si on sapphire, carried out by optical absorption measurements extending from energies above the band gap down to energies far into the sub gap region of Si, is presented. The changes induced in the optical band gap, band edge slopes and in the sub gap features of the spectra are carefully described. The various stages of formation and quen...
متن کاملAvoiding preamorphization damage in MeV heavy ion-implanted silicon
Implantation of 1.0 MeV ‘isIn in Si results in secondary-defect formation during subsequent 900 “C annealing if the total number of displaced Si atoms is greater than 1.6~ lOi’/ cm’, achieved with a dose near 1.5 X 10i3/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to rem...
متن کاملDIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
متن کاملDiffusion of ion implanted boron in preamorphized silicon
Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry �SIMS� and transmission electron microscopy �TEM�. A comparison of 4 keV, 1� 1014/cm2 boron implants into crystalline and Ge preamorphized silicon was undertaken. Upon annealing the B implant into crystalline material exhibited the well-known transient enhanced diffu...
متن کاملConcentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As
Articles you may be interested in Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Appl. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems Appl.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1970
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1658329